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Insys is about People involved in Research, Courses with Course material, PhD's and thesis |
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Insys Research Desics In the coming decade, our living environment will undergo a dramatic
change. The dumb appliances of today will be upgraded with processing
and communication power, connecting you to the world wherever you are.
As a consequence, we will be surrounded and even carry networks of smart
devices. IMEC is developing the key technologies for making this a reality:
high performant, yet small, low-cost and low-power radios-in-a-package,
design technologies for networks of mixed re-configurable hardware and
programmable software devices, Quality-of-Service provisions for interactive
multimedia applications. This development of key technologies is strongly
supported by over 40 Ph.D. students and this number is growing continuously
as the complexity of designing Systems-on-Chip increases exponentially
over time. (more) MCP The Microsystems, Components and Packaging Division (MCP) at IMEC, is
involved in research that ranges from fundamental materials and device
processing, to that of the integration and packaging of functional sub-systems,
modules and systems. The activities are driven by the long term vision
of fulfilling the potential needs and requirements of tomorrow's world
of ambient intelligence, 2D imaging devices, renewable energy systems
and power electronics.
SPDT In the IMEC Silicon divisions research and development is carried out on the materials, technological steps and modules, advanced structures and new components that will be needed for the next generations of deep-submicron CMOS integrated circuits. These activities are largely driven by the requirements as dictated by the acceleration of the ITRS roadmap (International technology Roadmap for Semiconductors) which predicts that for the future technology generations (90nm down to 32nm in 2013), the transistor gate length will continue to be scaled by a factor of 0.7 every 2 to 3 years. Recent predictions refer to MPU's by the year 2016 with transistor gate length of only 9nm and clock frequencies of 29GHz. (more)
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